* Bad block marker is stored in the last page of each block
* on Samsung and Hynix MLC devices; stored in first two pages
* of each block on Micron devices with 2KiB pages and on
- * SLC Samsung, Hynix, Toshiba and AMD/Spansion. All others scan
- * only the first page.
+ * SLC Samsung, Hynix, Toshiba, AMD/Spansion, and Macronix.
+ * All others scan only the first page.
*/
if ((chip->cellinfo & NAND_CI_CELLTYPE_MSK) &&
(*maf_id == NAND_MFR_SAMSUNG ||
(*maf_id == NAND_MFR_SAMSUNG ||
*maf_id == NAND_MFR_HYNIX ||
*maf_id == NAND_MFR_TOSHIBA ||
- *maf_id == NAND_MFR_AMD)) ||
+ *maf_id == NAND_MFR_AMD ||
+ *maf_id == NAND_MFR_MACRONIX)) ||
(mtd->writesize == 2048 &&
*maf_id == NAND_MFR_MICRON))
chip->bbt_options |= NAND_BBT_SCAN2NDPAGE;